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SI4618DY Datasheet(PDF) 9 Page - Vishay Siliconix |
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SI4618DY Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 15 page Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 9 Vishay Siliconix Si4618DY CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 1.0 1.2 0.001 10 100 0.00 0.2 0.4 0.6 0.8 25 °C 150 °C VSD - Source-to-Drain Voltage (V) 1 0.1 0.01 125 150 10-6 10-2 10-1 025 50 75 100 10 V VSD - Source-to-Drain Voltage (V) 10-3 10-4 10-5 30 V 20 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0.00 0.01 0.02 0.03 0.04 0.05 01234567 8 910 125 °C 25 °C ID = 8 A 0 40 80 120 160 200 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 100 1 0 0 1 1 1 . 0 0.01 10 0.1 1 ms 10 ms 10 s DC 100 ms 1 s 10 TA = 25 °C Single Pulse Limited by RDS(on)* |
Número de pieza similar - SI4618DY_09 |
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Descripción similar - SI4618DY_09 |
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