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SI4992EY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4992EY Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 9 page  Vishay Siliconix Si4992EY Document Number: 73082 S09-1341-Rev. C, 13-Jul-09 www.vishay.com 1 Dual N-Channel 75-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • High-Efficiency PWM Optimized • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 75 0.048 at VGS = 10 V 4.8 0.062 at VGS = 4.5 V 4.2 SO-8 S1 D1 G1 D1 S2 D2 G2 D2 5 6 7 8 Top View 2 3 4 1 Si4992EY-T1 -E3 (Lead (Pb)-free) Si4992EY-T1 -GE3 (Lead (Pb)-free and Halogen-free) Ordering Information: D1 G1 S1 N-Channel MOSFET D2 G2 S2 N-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) a TA = 25 °C ID 4.8 3.6 A TA = 85 °C 3.7 2.8 Continuous Source Currenta IS 21.1 Pulsed Drain Current IDM 20 Avalanche Current L = 0.1 mH IAS 8 Single Avalanche Energy (Duty Cycle ≤ 1 %) EAS 3.2 mJ Maximum Power Dissipationa TA = 25 °C PD 2.4 1.4 W TA = 85 °C 1.4 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 50 62.5 °C/W Steady State 85 110 Maximum Junction-to-Foot (Drain) Steady State RthJF 31 37 |
Número de pieza similar - SI4992EY_09 |
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Descripción similar - SI4992EY_09 |
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