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SI5504BDC Datasheet(PDF) 9 Page - Vishay Siliconix |
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SI5504BDC Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Document Number: 74483 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 9 Vishay Siliconix Si5504BDC P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 10 1 VSD ) V ( e g a t l o V n i a r D - o t - e c r u o S - 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 246 8 10 ID = 2.2 A VGS - Gate-to-Source Voltage (V) 125 °C 25 °C 0.001 0 1 50 10 30 10 0.01 Time (s) 20 40 0.1 100 1000 0.0001 Safe Operating Area, Junction-to-Ambient 0.01 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 10 0.1 0.1 1 10 Limited by R * DS(on) 1 TA = 25 °C Single Pulse 100 ms 1 s, 10 s DC 100 µs 100 10 ms 0.01 1 ms BVDSS Limited |
Número de pieza similar - SI5504BDC_10 |
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Descripción similar - SI5504BDC_10 |
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