SI5902BDC-T1-E3 datasheet(3/7 Pages) VISHAY

No. de pieza	SI5902BDC-T1-E3

Descripción Electrónicos	Dual N-Channel 30 V (D-S) MOSFET

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Document Number: 70415

S10-0548-Rev. B, 08-Mar-10

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Vishay Siliconix

Si5902BDC

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On Resistance vs. Drain Current

Gate Charge

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 10 V thru 6 V

3 V

VDS - Drain-to-Source Voltage (V)

4 V

5 V

0.00

0.04

0.08

0.12

0.16

0.20

0

5

10

15

20

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

0

2

4

6

8

10

0

1234

5

VDS = 15 V, ID

Qg - Total Gate Charge (nC)

VDS = 24 V, ID = 3.6 A

= 3.6 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TC = 125 °C

TC = 25 °C

VGS - Gate-to-Source Voltage (V)

TC = - 55 °C

0

50

100

150

200

250

300

0

5

10

15

20

25

30

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V, 4.5 V

ID = 3.1 A

TJ - Junction Temperature (°C)

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SI5902BDC-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

SI5902BDC-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix

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