SI7145DP datasheet(3/13 Pages) VISHAY

No. de pieza	SI7145DP

Descripción Electrónicos	P-Channel 30-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 64814

S09-0872-Rev. A, 18-May-09

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Vishay Siliconix

Si7145DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

20

40

60

80

100

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.0015

0.0019

0.0023

0.0027

0.0031

0.0035

0

163248

64

80

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

0

60

120

180

240

300

ID =20A

VDS =20 V

VDS =15 V

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.8

1.6

2.4

3.2

4.0

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

4000

8000

12 000

16 000

20 000

0

6

12

18

24

30

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.5

0.7

0.9

1.1

1.3

1.5

- 50

- 25

0

25

50

75

100

125

150

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

ID =25A

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Número de pieza similar - SI7145DP

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