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SI7478DP-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7478DP-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si7478DP Document Number: 72913 S09-0271-Rev. D, 16-Feb-09 www.vishay.com 1 N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 60 0.0075 at VGS = 10 V 20 0.0088 at VGS = 4.5 V 18.5 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom View Ordering Information: Si7478DP-T1-E3 (Lead (Pb)-free) Si7478DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150°C) a TA = 25 °C ID 20 15 A TA = 70 °C 16 12 Pulsed Drain Current IDM 60 Continuous Source Current (Diode Conduction)a IS 4.5 1.6 Avalanche Current IAS 35 Avalanche Energy EAS 61 mJ Maximum Power Dissipationa TA = 25 °C PD 5.4 1.9 W TA = 70 °C 3.4 1.2 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 18 23 °C/W Steady State 52 65 Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.3 |
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