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SI7748DP-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

No. de pieza SI7748DP-T1-GE3
Descripción Electrónicos  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7748DP-T1-GE3 Datasheet(HTML) 5 Page - Vishay Siliconix

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Document Number: 68785
S-81714-Rev. A, 04-Aug-08
www.vishay.com
5
Vishay Siliconix
Si7748DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
15
30
45
60
75
0
255075
100
125
150
TC - Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
14
28
42
56
70
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0.00
0.45
0.90
1.35
1.80
2.25
0
25
50
75
100
125
150
TA -Ambient Temperature (°C)


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