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SI7794DP Datasheet(PDF) 4 Page - Vishay Siliconix

No. de pieza SI7794DP
Descripción Electrónicos  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7794DP Datasheet(HTML) 4 Page - Vishay Siliconix

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Vishay Siliconix
Si7794DP
www.vishay.com
4
Document Number: 67692
S11-1150-Rev. A, 13-Jun-11
New Product
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
V
SD - Source-to-Drain Voltage (V)
T
J = 150 °C
T
J = 25 °C
0
25
50
75
100
125
150
TJ - Temperature (°C)
10 V
30 V
20 V
10-3
10-5
10-6
10-4
10-2
10-1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.003
0.006
0.009
0.012
0.015
02468
10
V
GS - Gate-to-Source Voltage (V)
T
J = 125 °C
T
J = 25 °C
I
D = 20 A
0
40
80
120
160
200
0.001
0.01
0.1
1
10
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
1 s
Limited by R
DS(on)*
10 ms
I
DM Limited
T
C = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 ms
10 s
DC
I
D Limited


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