SIZ728DT datasheet(6/14 Pages) VISHAY

No. de pieza	SIZ728DT

Descripción Electrónicos	N-Channel 25 V (D-S) MOSFETs

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 67694

S11-0608-Rev. A, 04-Apr-11

Vishay Siliconix

SiZ728DT

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

10

20

30

40

50

60

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

0

5

10

15

20

25

30

25

50

75

100

125

150

T

C - Case Temperature (°C)

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