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SS5P4HM3-86A Datasheet(Hoja de datos) 3 Page - Vishay Siliconix

No. de Pieza. SS5P4HM3-86A
Descripción  High Current Density Surface Mount Schottky Barrier Rectifiers
Descarga  5 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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 3 page
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Document Number: 88982
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS5P3, SS5P4
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Lead Temperature (°C)
6.0
5.0
4.0
3.0
2.0
1.0
0
80
90
100
110
120
130
140
150
Resistive or Inductive Load
T
L measured
at the Cathode Band Terminal
0
0.5
1.0
1.5
2.0
2.5
3.0
012
3
4
5
6
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
0
0.2
0.4
0.6
0.8
1.0
100
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
0.001
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.1
1
10
100
100
1000
Reverse Voltage (V)
Junction to Ambient
0.01
0.1
1
10
100
1
10
100
t - Pulse Duration (s)




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