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CSD87330Q3D Datasheet(PDF) 2 Page - Texas Instruments |
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CSD87330Q3D Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 21 page  CSD87330Q3D SLPS284B – AUGUST 2011 – REVISED SEPTEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS TA = 25°C (unless otherwise noted) (1) VALUE UNIT PARAMETER CONDITIONS MIN MAX VIN to PGND 30 V VSW to PGND 30 V Voltage Range VSW to PGND (10ns) 32 V TG to TGR -8 10 V BG to PGND -8 10 V Pulsed Current Rating, IDM 60 A Power Dissipation, PD 6 W Sync FET, ID = 56A, L = 0.1mH 157 Avalanche Energy EAS mJ Control FET, ID = 36A, L = 0.1mH 65 Operating Junction and Storage Temperature Range, TJ, TSTG –55 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS TA = 25° (unless otherwise noted) PARAMETER CONDITIONS MIN MAX UNIT Gate Drive Voltage, VGS 4.5 8 V Input Supply Voltage, VIN 27 V Switching Frequency, fSW CBST = 0.1µF (min) 1500 kHz Operating Current 20 A Operating Temperature, TJ 125 °C POWER BLOCK PERFORMANCE (1) TA = 25° (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT VIN = 12V, VGS = 5V, VOUT = 1.3V, Power Loss, PLOSS (1) IOUT = 15A, fSW = 500kHz, 2 W LOUT = 1µH, TJ = 25ºC VIN Quiescent Current, IQVIN TG to TGR = 0V BG to PGND = 0V 10 µA (1) Measurement made with six 10- µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and using a high current 5V driver IC. THERMAL INFORMATION TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT Junction to ambient thermal resistance (Min Cu)(1) 135 RθJA Junction to ambient thermal resistance (Max Cu)(1)(2) 73 °C/W Junction to case thermal resistance (Top of package)(1) 29 RθJC Junction to case thermal resistance (PGND Pin) (1) 2.5 (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2 oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2) Cu. 2 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated |
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