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TSAL7600 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza TSAL7600
Descripción Electrónicos  High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSAL7600 Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 81015
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.8, 29-Jun-09
1
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL7600
Vishay Semiconductors
DESCRIPTION
TSAL7600 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm):
∅ 5
• Peak wavelength:
λ
p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8389
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSAL7600
25
± 30
940
800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSAL7600
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
1.5
A
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered
on PCB
RthJA
230
K/W


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