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BCV62C Datasheet(PDF) 3 Page - Siemens Semiconductor Group

No. de Pieza. BCV62C
Descripción  PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
Descarga  5 Pages
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Fabricante  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
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BCV62C Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
BCV 62
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Base-emitter forward voltage
IE = 10
µA
IE = 250 mA
VBES
0.4
1.8
mA
Thermal coupling of transistor T1 and
transistor T21)
T1: VCE = 5 V
Maximum current for thermal stability of IC1
IE2
–5–
DC characteristics for transistor T2
Matching of transistor T1 and transistor T2
at IE2 = 0.5 mA and VCE1 = 5 V
TA = 25 ˚C
TA = 150 ˚C
IC1 / IC2
IC1 / IC2
0.7
0.7
1.3
1.3
Unit
Values
Parameter
Symbol
min.
typ.
max.
MHz
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT
250
AC characteristics for transistor T1
pF
Collector-base capacitance
VCB = 10 V, IC = iC = 0, f = 1 MHz
Ccb
–3–
Input capacitance
VEB = 0.5 V, IC = iC = 0, f = 1 MHz
Cibo
–8–
k
Input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h11e
4.5
dB
Noise figure
IC = 200
µA, VCE = 5 V, RS = 2 k
f = 1 kHz, B = 200 Hz
F
–2–
10–4
Open-circuit reverse voltage transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h12e
–2–
Short-circuit forward current transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h21e
100
900
µS
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h22e
–30
1)
Without emitter resistor. Device mounted on alumina 15 mm
× 16.5 mm × 0.7 mm.


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