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BCW67BCW68 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BCW67BCW68 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
4 / 6 page Semiconductor Group 4 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat – – – – 0.3 0.7 Base-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat – – – – 1.25 2 DC characteristics MHz Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 200 – AC characteristics pF Output capacitance VCB = 10 V, f = 1 MHz Cobo –6– Input capacitance VEB = 0.5 V, f = 1 MHz Cibo –60 – Unit Values Parameter Symbol min. typ. max. 1) Pulse test: t ≤ 300 µs, D = 2 %. BCW 67 BCW 68 |
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