BCW66H datasheet(4/6 Pages) SIEMENS

No. de pieza	BCW66H

Descripción Electrónicos	NPN Silicon AF Transistors (For general AF applications High current gain)

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Fabricante Electrónico	SIEMENS [Siemens Semiconductor Group]

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4 / 6 page

BCW 65

BCW 66

Semiconductor Group

4

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

V

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VCEsat

–

0.3

0.7

Base-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VBEsat

–

1.25

2

DC characteristics

MHz

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

fT

–

170

–

AC characteristics

pF

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–6–

Input capacitance

VEB = 0.5 V, f = 1 MHz

Cibo

–60

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

1)

Pulse test: t

≤ 300 µs, D = 2 %.

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BCW66H Datasheet(PDF) 4 Page - Siemens Semiconductor Group

BCW66H Datasheet(HTML) 4 Page - Siemens Semiconductor Group

Número de pieza similar - BCW66H

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