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BF622 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BF622 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 NPN Silicon High-Voltage Transistor BF 622 Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BF 622 Q62702-F1052 DA SOT-89 1 2 3 B C E Thermal Resistance Junction - ambient2) Rth JA ≤ 90 K/W Junction - soldering point Rth JS ≤ 30 Parameter Symbol Values Unit Collector-emitter voltage VCE0 250 V Peak collector current ICM 100 Collector current IC 50 mA Junction temperature Tj 150 ˚C Total power dissipation, TS = 120 ˚C Ptot 1W Storage temperature range Tstg – 65 … + 150 Collector-base voltage VCB0 250 Emitter-base voltage VEB0 5 Collector-emitter voltage, RBE = 2.7 k Ω VCER 250 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. q Suitable for video output stages in TV sets q High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary type: BF 623 (PNP) 5.91 |
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