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TSM2N70CPROG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM2N70CPROG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 10 page TSM2N70 700V N-Channel Power MOSFET 1/10 Version: B11 TO-220 TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY VDS (V) RDS(on)( ) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● Low RDS(ON) 6.5 (Max.) ● Low gate charge typical @ 9.5nC (Typ.) ● Low Crss typical @ 4.5pF (Typ.) ● Fast Switching Ordering Information Part No. Package Packing TSM2N70CZ C0 TO-220 50pcs / Tube TSM2N70CH C5 TO-251 70pcs / Tube TSM2N70CH C5G TO-251 70pcs / Tube TSM2N70CP RO TO-252 2.5Kpcs / 13” Reel TSM2N70CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 2 A Pulsed Drain Current * IDM 8 A Repetitive avalanche Current IAR 2 A Single Pulse Avalanche Energy (Note 2) EAS 110 mJ Maximum Power Dissipation @TC = 25 oC PTOT 45 W Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC * Limited by maximum junction temperature Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 2.78 oC/W Thermal Resistance - Junction to Ambient RӨJA 100 oC/W Notes: Surface mounted on FR4 board t ≤ 10sec Block Diagram N-Channel MOSFET Pin Definition: 1. Gate 2. Drain 3. Source |
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