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BC856B Datasheet(PDF) 2 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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BC856B Datasheet(HTML) 2 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
2 / 5 page ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BC856 BC857 BC858 VCBO IC= -10μA, IE=0 -80 -50 -30 V Collector-emitter breakdown voltage BC856 BC857 BC858 VCEO IC= -10mA, IB=0 -65 -45 -30 V Emitter-base breakdown voltage VEBO IE= -1μA, IC=0 -5 V Collector cut-off current BC856 BC857 BC858 ICBO VCB= -70 V , IE=0 VCB= -45 V , IE=0 VCB= -25 V , IE=0 -0.1 μA Collector cut-off current BC856 BC857 BC858 ICEO VCE= -60 V , IB=0 VCE= -40 V , IB=0 VCE= -25 V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 μA DC current gain BC856A, 857A,858A BC856B, 857B,858B BC857C,BC858C hFE VCE= -5V, IC= -2mA 125 220 420 250 475 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V Transition frequency fT VCE= -5 V, IC= -10mA f=100MHz 100 MHz Collector capacitance Cob VCB=-10V, f=1MHz 4.5 pF 2 Date:2011/05 www.htsemi.com semiconductor JinYu BC856A,B BC857A, B,C BC858A, B,C |
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