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STD123S Datasheet(Hoja de datos) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

No. de Pieza. STD123S
Descripción  TRANSISTOR(NPN)
Descarga  2 Pages
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Fabricante  HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
Página de inicio  http://www.htsemi.com
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TRANSISTOR(NPN)
FEATURES
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
Marking:123
MAXIMUM RATINGS (TA=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
6.5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
350
mW
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V (BR) CBO
IC=50μA, IE=0
20
V
Collector-emitter breakdown voltage
V (BR) CEO
IC =1mA, IB=0
15
V
Emitter-base breakdown voltage
V (BR) EBO
IE= 50μA, IC=0
6.5
V
Collector cut-off current
ICBO
VCB= 20 V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 6V, IC=0
0.1
μA
DC current gain
hFE
VCE=1V, IC= 100mA
150
Collector-emitter saturation voltage
VCE (sat)
IC=500mA, IB= 50mA
0.3
V
Transition frequency
fT
VCE=5V, IC=50mA
260
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
5
pF
On resistance
RON
f=1KHz,IB=1mA,
VIN=0.3V
0.6
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
STD1 23S
1 
Date:2011/05
www.htsemi.com
semiconductor
JinYu




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