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1N3670A Datasheet(PDF) 2 Page - Vishay Siliconix |
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1N3670A Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93493 2 Revision: 24-Jun-08 1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A Notes (1) JEDEC registered values (2) I2t for time tx = I2√t x √tx (3) Maximum peak reverse current (IRM) under same conditions ≈ 2 x rated IR(AV) FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case temperature IF(AV) 180° sinusoidal conduction 12 (1) A 150 (1) °C Maximum peak one cycle non-repetitive surge current IFSM Half cycle 50 Hz sine wave or 6 ms rectangular pulse Following any rated load condition and with rated VRRM applied 230 A Half cycle 60 Hz sine wave or 5 ms rectangular pulse 240 (1) Half cycle 50 Hz sine wave or 6 ms rectangular pulse Following any rated load condition and with VRRM applied following surge = 0 275 Half cycle 60 Hz sine wave or 5 ms rectangular pulse 285 Maximum I2t for fusing I2t t = 10 ms With rated VRRM applied following surge, initial TJ = 200 °C 260 A2s t = 8.3 ms 240 Maximum I2t for individual device fusing t = 10 ms With VRRM = 0 following surge, initial TJ = 200 °C 370 t = 8.3 ms 340 Maximum I2 √t for individual device fusing I2 √t (2) t = 0.1 to 10 ms, VRRM = 0 following surge 3715 A2 √s Maximum forward voltage drop VFM IF(AV) = 12 A (38 A peak), TC = 25 °C 1.35 (1) V Maximum average reverse current VRRM = 50 IR(AV) (3) Maximum rated IF(AV) and TC 3.0 (1) mA VRRM = 100 2.5 (1) VRRM = 150 2.25 (1) VRRM = 200 2.0 (1) VRRM = 300 1.75 (1) VRRM = 400 1.5 (1) VRRM = 500 1.25 (1) VRRM = 600 1.0 (1) VRRM = 700 0.9 (1) VRRM = 800 0.8 (1) VRRM = 900 0.7 (1) VRRM = 1000 0.6 (1) |
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