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1N3673A Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza 1N3673A
Descripción Electrónicos  Medium Power Silicon Rectifier Diodes, 12 A
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

1N3673A Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 93493
2
Revision: 24-Jun-08
1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2√t x √tx
(3) Maximum peak reverse current (IRM) under same conditions ≈ 2 x rated IR(AV)
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° sinusoidal conduction
12 (1)
A
150 (1)
°C
Maximum peak one cycle
non-repetitive surge current
IFSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with rated
VRRM applied
230
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
240 (1)
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with VRRM
applied following surge = 0
275
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
285
Maximum I2t for fusing
I2t
t = 10 ms
With rated VRRM applied
following surge,
initial TJ = 200 °C
260
A2s
t = 8.3 ms
240
Maximum I2t for individual
device fusing
t = 10 ms
With VRRM = 0 following
surge, initial TJ = 200 °C
370
t = 8.3 ms
340
Maximum I2
√t for individual
device fusing
I2
√t (2)
t = 0.1 to 10 ms, VRRM = 0 following surge
3715
A2
√s
Maximum forward voltage drop
VFM
IF(AV) = 12 A (38 A peak), TC = 25 °C
1.35 (1)
V
Maximum average
reverse current
VRRM = 50
IR(AV) (3)
Maximum rated IF(AV) and TC
3.0 (1)
mA
VRRM = 100
2.5 (1)
VRRM = 150
2.25 (1)
VRRM = 200
2.0 (1)
VRRM = 300
1.75 (1)
VRRM = 400
1.5 (1)
VRRM = 500
1.25 (1)
VRRM = 600
1.0 (1)
VRRM = 700
0.9 (1)
VRRM = 800
0.8 (1)
VRRM = 900
0.7 (1)
VRRM = 1000
0.6 (1)


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