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1N4448WS-V Datasheet(PDF) 3 Page - Vishay Siliconix |
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1N4448WS-V Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page 1N4151W-V Document Number 85721 Rev. 1.3, 17-Aug-10 Vishay Semiconductors www.vishay.com 3 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Figure 5. Leakage Current vs. Junction Temperature 1 18744 10 100 1000 10000 020 4060 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) =50 V VR Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration ν /T T = 1/f =t pp I FRM t p T t I ν =0 0.1 0.2 0.5 10 10 1 -1 100 10 1 -5 10 10 -4 10 -3 10 -2 18709 tp -Pulse Length (s) |
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