BUL128D datasheet(1/1 Pages) TGS

No. de pieza	BUL128D

Descripción Electrónicos	HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

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Fabricante Electrónico	TGS [Tiger Electronic Co.,Ltd]

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Parameter

ol

Value

Unit

Collector-Base Voltage

V

CBO

700

V

Collector-Emitter Voltage

V

CEO

400

V

Emitter-Base Voltage

V

EBO

9.0

V

Collector Current

I

C

4.0

A

Base Current

I

B

2.0

A

Total Dissipation at

P

tot

70

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-65~150

oC

BUL128D

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CES

V

CE=700V, IE=0

—

0.25

mA

Emitter Cut-off Current

I

EBO

V

EB=9V, IC=0

—

0.1

mA

Collector-Emitter Sustaining Voltage

V

CEO

I

C=100mA, IB=0

400

—

V

Emitter-Base BreakdownVoltage

(I

C=0)

BV

EBO

I

E=10mA

9

—

18

V

DC Current Gain

h

FE(1)

V

CE=5V, IC=2.0A

12

—

32

h

FE(2)

V

CE=5V, IC=10mA

10

—

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C=1.0A,IB=0.2A

—

1.0

V

I

C =4.0A, IB=1.0A

—

0.5

—

Base-Emitter Saturation Voltage

V

BE(sat)

I

C=1.0A,IB=0.2A

—

1.2

V

I

C =2.5A,IB=0.5A

—

1.3

Storage Time

T

S

I

C=2.0A IB1=-IB2=0.4A

2.0

—

2.9

us

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

Product specification

ABSOLUTE MAXIMUM RATINGS

TO-220AB

■

NPN TRANSISTOR

■

HIGH VOLTAGE CAPABILITY

■

LOW SPREAD OF DYNAMIC PARAMETERS

■

MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

■

(Tcase = 25 ℃ unless otherwise specified)

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage

capability. It uses a Cellular Emitter structure

with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

APPLICATIONS

■ ELECTRONIC BALLASTS FOR FLUORESCENT

LIGHTING

■ FLYBACK AND FORWARD SINGLE

TIGER ELECTRONIC CO.,LTD

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