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2009 ROHM Co., Ltd. All rights reserved.

2010.02 - Rev.A

Midium Power Transistors (80V / 2.5A)

2SCR544R

 Structure

 Dimensions

(Unit : mm)

NPN Silicon epitaxial planar transistor

 Features

1) Low saturation voltage, typically

2) High speed switching

 Applications

Driver

 Inner circuit

(Unit : mm)

Package

Taping

Code

TL

Basic ordering unit (pieces)

3000

2SCR544R



 Absolute maximum ratings

(Ta = 25

°C)

Symbol

Limits

Unit

Collector-base voltage

80

V

Collector-emitter voltage

80

V

Emitter-base voltage

6V

DC

2.5

A

Pulsed

5A

0.5

W

1W

Junction temperature

150

°C

Range of storage temperature

-55 to 150

°C

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

 Packaging specifications

Type

Parameter

Collector current

Power dissipation

*1

*2

*3

Abbreviated symbol : NS

(1) Base

(2) Emitter

(3) Collector

TSMT3

0~0.1

0.16

0.85

1.0MAX

0.7

(2)

(1)

(3)

2.9

1.9

0.95

0.95

0.4

(1) Base

(2) Emitter

(3) Collector

(1)

(2)

(3)