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BTS412B2 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BTS412B2 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
4 / 14 page BTS 412B2 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 Protection Functions Initial peak short circuit current limit (pin 3 to 5)9), ( max 450 µs if VON > VON(SC) ) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: 9 -- 4 -- 12 -- 23 -- 15 A Overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 10) -- 5 -- A Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: min value valid only, if input "low" time exceeds 60 µs td(SC) -- -- 450 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL) 61 68 73 V IL= 1 A, Tj =-40..+150°C: -- -- 75 Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) -- 8.5 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆T jt -- 10 -- K Reverse battery (pin 3 to 1) 10) - Vbb -- -- 32 V Diagnostic Characteristics Open load detection current Tj=-40...+150°C: (included in standby current Ibb(off)) IL(off) 15 30 60 µA Open load detection voltage Tj=-40..150°C: VOUT(OL) 234 V 9 ) Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown 10 ) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). |
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