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BUZ80A Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ80A Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 9 page  Semiconductor Group 3 07/96 BUZ 80A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A gfs 1 1.8 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 1600 2100 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 90 150 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 30 55 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(on) - 30 45 ns Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr - 40 60 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) - 110 140 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf - 60 80 |
Número de pieza similar - BUZ80A |
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Descripción similar - BUZ80A |
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