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2SC3355 Datasheet(PDF) 7 Page - Renesas Technology Corp

No. de pieza 2SC3355
Descripción Electrónicos  NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3355 Datasheet(HTML) 7 Page - Renesas Technology Corp

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Data Sheet PU10207EJ01V0DS
5
2SC2570A
SMITH CHART
VCE = 10 V
IC = 20 mA
ZO = 50
Ω
VCE = 10 V
IC = 5 mA
ZO = 50
Ω
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.40
0.41
0.42
0.43
50
60
70
80
90
100
110
120
130
0.1
0.2
0.3
0.4
50
3.0
4.0
5.0
10
20
0.2
0.4
0.6
0.8
0.2
0.4
0.6
0.8
1.0
RESISTANCE COMPONENT
R
Zo
NE
NT
1.5 GHz
1.5 GHZ
S22e
S11e
1.0
1.0
0.8
0.6
0.4
0.4
0.2
0.2
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.40
0.41
0.42
0.43
50
60
70
80
90
100
110
120
130
0.1
0.2
0.3
0.4
50
3.0
4.0
5.0
10
20
0.2
0.4
0.6
0.8
0.2
0.4
0.6
0.8
1.0
RESISTANCE COMPONENT
R
Zo
NE
NT
1.5 GHz
1.5 GHZ
S22e
S11e
1.0
1.0
0.8
0.2
0.4
0.6
0.4
0.2


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