AM6922NH

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM6922NH_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

Dual N-Channel Logical Level MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

TSSOP-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol Maximum Units

20

±8

o

C

6.7

o

C

5.5

±30

1.5

A

o

C

1.2

o

C

0.8

-55 to 150

o

C

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Power Dissipation

a

Symbol

Typ

Max

t <= 10 sec

72

83

Steady State

100

120

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

a

o

C/W

Parameter

TSSOP-8

Top View

D

S1

S1

1

2

3

D

S

1

G

1

N-Channel MOSFET

D

S

2

G

2

N-Channel MOSFET

4

G1

D

S2

S2

8

7

6

5

G2

6.7

5.8

4.9

20

PRODUCT SUMMARY