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MCM63P531 Datasheet(PDF) 1 Page - Motorola, Inc |
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MCM63P531 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 16 page MCM63P531 1 MOTOROLA FAST SRAM Advance Information 32K x 32 Bit Pipelined BurstRAM ™ Synchronous Fast Static RAM The MCM63P531 is a 1M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the 68K Family, PowerPC ™, and Pentium ™ microprocessors. It is organized as 32K words of 32 bits each, fabricated using high performance silicon gate CMOS technology. This device integrates input registers, an output register, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). CMOS circuitry reduces the overall power consump- tion of the integrated functions for greater reliability. Addresses (SA), data inputs (DQx), and all control signals except output en- able (G) and Linear Burst Order (LBO) are clock (K) controlled through positive– edge–triggered noninverting registers. Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst addresses can be generated internally by the MCM63P531 (burst sequence op- erates in linear or interleaved mode dependent upon state of LBO) and controlled by the burst address advance (ADV) input pin. Write cycles are internally self–timed and are initiated by the rising edge of the clock (K) input. This feature eliminates complex off–chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchro- nous write enable SW are provided to allow writes to either individual bytes or to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx are asserted with SW. All bytes are written if either SGW is asserted or if all SBx and SW are asserted. For read cycles, pipelined SRAMs output data is temporarily stored by an edge–triggered output register and then released to the output buffers at the next rising edge of clock (K). The MCM63P531 operates from a 3.3 V power supply, all inputs and outputs are LVTTL compatible. • MCM63P531–4.5 = 4.5 ns access / 10 ns cycle MCM63P531–7 = 7 ns access / 13.3 ns cycle MCM63P531–8 = 8 ns access / 15 ns cycle MCM63P531–9 = 9 ns access / 16.6 ns cycle • Single 3.3 V + 10%, – 5% Power Supply • ADSP, ADSC, and ADV Burst Control Pins • Selectable Burst Sequencing Order (Linear/Interleaved) • Internally Self–Timed Write Cycle • Byte Write and Global Write Control • Sleep Mode (ZZ) • Intel PBSRAM 2.0 Compliant • Single–Cycle Deselect Timing • 100 Pin TQFP Package BurstRAM is a trademark of Motorola, Inc. PowerPC is a trademark of IBM Corp. Pentium is a trademark of Intel Corp. This document contains information on a new product. Motorola reserves the right to change or discontinue this product without notice. Order this document by MCM63P531/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM63P531 TQ PACKAGE TQFP CASE 983A–01 6/21/96 © Motorola, Inc. 1996 |
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