1N70G-T92-B datasheet(2/8 Pages) UTC

No. de pieza	1N70G-T92-B

Descripción Electrónicos	1.2A, 700V N-CHANNEL POWER MOSFET

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Fabricante Electrónico	UTC [Unisonic Technologies]

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2 / 8 page

1N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-171,C

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

1.2

A

Continuous Drain Current

ID

1.2

A

Pulsed Drain Current (Note 2)

IDM

4.8

A

Single Pulsed (Note 3)

EAS

50

mJ

Avalanche Energy

Repetitive (Note 2)

EAR

4.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

PD

3

W

Junction Temperature

TJ

+150

℃

Operating Temperature

TOPR

-55 ~ +150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

79

℃

/W

Junction to Case

θJc

29

℃

/W

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