Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

2N80L-TM3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 2N80L-TM3-R
Descripción Electrónicos  2A, 800V N-CHANNEL POWER MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N80L-TM3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  2N80L-TM3-R Datasheet HTML 1Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 2Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 3Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 4Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 5Page - Unisonic Technologies 2N80L-TM3-R Datasheet HTML 6Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
2N80
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-480.C
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
2.4
A
Drain Current
Continuous
ID
2.4
A
Pulsed (Note 1)
IDM
9.6
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
180
mJ
Repetitive (Note 1)
EAR
8.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Power Dissipation
TO-220F
PD
24
W
TO-251
TO-252
43
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220F
θJA
62.5
°C/W
TO-251
TO-252
110
Junction to Case
TO-220F
θJC
5.2
°C/W
TO-251
TO-252
2.85
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
800
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
0.9
V/°C
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
10
µA
VDS=640V, TC=125°C
100
Gate- Source Leakage Current
Forward
IGSS
VGS=+30V, VDS=0V
+100 nA
Reverse
VGS=-30V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.2A
4.8
6.3
Forward Transconductance (Note 1)
gFS
VDS=50V, ID=1.2A
2.65
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
425
550
pF
Output Capacitance
COSS
45
60
pF
Reverse Transfer Capacitance
CRSS
5.5
7.0
pF


Número de pieza similar - 2N80L-TM3-R

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Unisonic Technologies
2N80L-TM3-R UTC-2N80L-TM3-R Datasheet
263Kb / 7P
   N-CHANNEL POWER MOSFET
More results

Descripción similar - 2N80L-TM3-R

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Unisonic Technologies
2N80Z UTC-2N80Z Datasheet
235Kb / 6P
   2A, 800V N-CHANNEL POWER MOSFET
logo
Rohm
R8002CND3FRA ROHM-R8002CND3FRA Datasheet
1Mb / 14P
   Nch 800V 2A Power MOSFET
R8002ANJ ROHM-R8002ANJ Datasheet
986Kb / 14P
   Nch 800V 2A Power MOSFET
R8002ANJFRG ROHM-R8002ANJFRG Datasheet
1Mb / 14P
   Nch 800V 2A Power MOSFET
logo
Taiwan Semiconductor Co...
TSM10N80 TSC-TSM10N80 Datasheet
497Kb / 10P
   800V N-Channel Power MOSFET
TSM3N80 TSC-TSM3N80_13 Datasheet
573Kb / 12P
   800V N-Channel Power MOSFET
TSM3N80 TSC-TSM3N80 Datasheet
526Kb / 12P
   800V N-Channel Power MOSFET
TSM10N80 TSC-TSM10N80_14 Datasheet
417Kb / 8P
   800V N-Channel Power MOSFET
logo
Unisonic Technologies
10N80 UTC-10N80 Datasheet
199Kb / 6P
   800V N-CHANNEL POWER MOSFET
logo
Taiwan Semiconductor Co...
TSM4N80 TSC-TSM4N80 Datasheet
216Kb / 7P
   800V N-Channel Power MOSFET
More results


Html Pages

1 2 3 4 5 6


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com