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2N3906L-T92-K Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 2N3906L-T92-K
Descripción Electrónicos  GENERAL PURPOSE APPLIATION
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2N3906L-T92-K Datasheet(HTML) 2 Page - Unisonic Technologies

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2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R201-028, C
ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Base Current
IB
-50
mA
Collector dissipation
PC
625
mW
Junction Temperature
TJ
125
°С
Operating Temperature
TOPR
-20 ~ +85
°С
Storage Temperature
TSTG
-40 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector Cut-Off Current
ICEX
VCE=-30V, VEB=-3V
-50
nA
Base Cut-Off Current
IBL
VCE=-30V, VEB=-3V
-50
nA
Collector-Base Breakdown Voltage
VCBO
IC=-10μA, IE=0
-40
V
Collector-Emitter Breakdown Voltage
VCEO
IC=-1mA, IB=0 (Note)
-40
V
Emitter-Base Breakdown Voltage
VEBO
IE=-10μA, IC=0
-6
V
DC Current Gain (Note)
hFE1
VCE=-1V, IC=-0.1mA
60
hFE2
VCE=-1V, IC=-1mA
80
hFE3
VCE=-1V, IC=-10mA
100
300
hFE4
VCE=-1V, IC=-50mA
60
hFE5
VCE=-1V, IC=-100mA
30
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)1 IC=-10mA, IB=-1mA
-0.25
V
VCE(SAT)2 IC=-50mA, IB=-5mA
-0.4
Base-Emitter Saturation Voltage
VBE(SAT)1 IC=-10mA, IB=-1mA
-0.65
-0.85
V
VBE(SAT)2 IC=-50mA, IB=-5mA
-0.95
Transition Voltage
fT
VCE=-20V, IC=-10mA, f=100MHz
250
MHz
Output Capacitance
COB
VCB=-5V, IE=0, f=1MHz
4.5
pF
Turn On Time
tON
VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA
70
ns
Turn Off Time
tOFF
IB1=1B2=-1mA
300
ns
Note: Pulse test: PW<=300μs, Duty Cycle<=2%


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