Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

2N7002LLK-AE2-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 2N7002LLK-AE2-R
Descripción Electrónicos  60V, 115mA N-CHANNEL POWER MOSFET
Download  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N7002LLK-AE2-R Datasheet(HTML) 2 Page - Unisonic Technologies

  2N7002LLK-AE2-R Datasheet HTML 1Page - Unisonic Technologies 2N7002LLK-AE2-R Datasheet HTML 2Page - Unisonic Technologies 2N7002LLK-AE2-R Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
2N7002LL
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-284.d
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RG=1.0MΩ)
VDGR
60
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Non-repetitive (tP≦50μs)
VGSM
±40
V
Drain Current
Continuous(TC=25°C)
ID
115
mA
Pulse(Note 2)
460
Power Dissipation (TA = 25°C)
PD
225
mW
Derate above 25°C
1.8
mW /°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width≦300μs, Duty cycle≦2%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
556
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10µA
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V (TJ=25°C)
1.0
µA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250 µA
1.0
2.5
V
Drain-Source On-State Voltage
VDS(ON)
VGS=10V, ID=115mA
3.75
V
VGS=5V, ID=50mA
0.375
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=115mA(TC=25°C)
7.5
VGS=5V, ID=50mA(TC=25°C)
7.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
50
pF
Output Capacitance
COSS
25
pF
Reverse Transfer Capacitance
CRSS
5.0
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=25V, ID=115mA,
VGEN=10V, RG=25Ω, RL=50Ω
20
ns
Turn-OFF Delay Time
tD(OFF)
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=115mA, VGS=0V
1.5
V
Maximum Body-Diode Continuous Current
IS
115
mA
Source Current Pulsed
ISM
115
mA
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.


Número de pieza similar - 2N7002LLK-AE2-R

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Unisonic Technologies
2N7002LL UTC-2N7002LL Datasheet
162Kb / 3P
   60V, 115mA, N-CHANNEL MOSFET
2N7002LLG-AE2-R UTC-2N7002LLG-AE2-R Datasheet
162Kb / 3P
   60V, 115mA, N-CHANNEL MOSFET
2N7002LLG-AE2-R UTC-2N7002LLG-AE2-R Datasheet
143Kb / 3P
   N-CHANNEL POWER MOSFET
2N7002LL UTC-2N7002LL_15 Datasheet
143Kb / 3P
   N-CHANNEL POWER MOSFET
More results

Descripción similar - 2N7002LLK-AE2-R

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Unisonic Technologies
2N7002L UTC-2N7002L_10 Datasheet
162Kb / 3P
   60V, 115mA, N-CHANNEL MOSFET
2N7002LL UTC-2N7002LL Datasheet
162Kb / 3P
   60V, 115mA, N-CHANNEL MOSFET
logo
SeCoS Halbleitertechnol...
S2N7002K SECOS-S2N7002K Datasheet
1,011Kb / 3P
   115mA, 60V N-Channel Enhancement Mode Power MOSFET
logo
Rohm
RK7002 ROHM-RK7002 Datasheet
112Kb / 4P
   Interface and switching (60V, 115mA)
RK7002T116 ROHM-RK7002T116 Datasheet
115Kb / 4P
   Interface and switching (60V, 115mA)
logo
Taiwan Semiconductor Co...
TSM230N06PQ56 TSC-TSM230N06PQ56 Datasheet
783Kb / 6P
   60V N-Channel Power MOSFET
TSM210N06 TSC-TSM210N06 Datasheet
68Kb / 4P
   60V N-Channel Power MOSFET
TSM60N06 TSC-TSM60N06_15 Datasheet
302Kb / 4P
   60V N-Channel Power MOSFET
TSM230N06 TSC-TSM230N06 Datasheet
771Kb / 8P
   60V N-Channel Power MOSFET
TSM340N06 TSC-TSM340N06 Datasheet
924Kb / 9P
   60V N-Channel Power MOSFET
More results


Html Pages

1 2 3


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com