MCM6709A

2–2

MOTOROLA FAST SRAM

E

G

W

Mode

Output

Cycle

H

X

X

Not Selected

High–Z

—

L

H

H

Read

High–Z

—

L

L

H

Read

Dout

Read Cycle

L

X

L

Write

Din

Write Cycle

Rating

Symbol

Value

Unit

Power Supply Voltage

VCC

– 0.5 to + 7.0

V

Voltage Relative to VSS for Any Pin

Except VCC

Vin, Vout

– 0.5 to VCC + 0.5

V

Output Current (per I/O)

Iout

± 30

mA

Power Dissipation

PD

2.0

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature — Plastic

Tstg

– 55 to + 125

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VCC

4.5

5.0

5.5

V

Input High Voltage

VIH

2.2

—

VCC + 0.3*

V

Input Low Voltage

VIL

– 0.5**

—

0.8

V

* VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.

** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.

DC CHARACTERISTICS

Parameter

Symbol

Min

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC)

Ilkg(I)

—

± 1.0

µA

Output Leakage Current (E = VIH, Vout = 0 to VCC)

Ilkg(O)

—

± 1.0

µA

Output High Voltage (IOH = – 4.0 mA)

VOH

2.4

—

V

Output Low Voltage (IOL = 8.0 mA)

VOL

—

0.4

V

POWER SUPPLY CURRENTS

Parameter

Symbol

MCM6709A–8

MCM6709A–10

MCM6709A–12

Unit

Notes

AC Active Supply Current (Iout = 0 mA, VCC = max,

f = fmax)

ICCA

185

175

165

mA

1, 2, 3

AC Standby Current (E = VIH, VCC = max, f = fmax)

ISB1

120

110

105

mA

1, 2, 3

CMOS Standby Current (VCC = max, f = 0 MHz,

E

≥ VCC – 0.2 V, Vin ≤ VSS, or ≥ VCC – 0.2 V)

ISB2

50

50

50

mA

NOTES:

1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).

2. All addresses transition simultaneously low (LSB) and then high (MSB).

3. Data states are all zero.

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid appli-

cation of any voltage higher than maximum

rated voltages to this high–impedance circuit.

This BiCMOS memory circuit has been de-

signed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear feet

per minute is maintained.