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ADG5234BRUZ Datasheet(PDF) 5 Page - Analog Devices

No. de pieza ADG5234BRUZ
Descripción Electrónicos  High Voltage Latch-Up Proof
Download  24 Pages
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
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ADG5234BRUZ Datasheet(HTML) 5 Page - Analog Devices

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Data Sheet
ADG5233/ADG5234
Rev. A | Page 5 of 24
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
CS (Off)
4.5
pF typ
VS = 0 V, f = 1 MHz
CD (Off)
10
pF typ
VS = 0 V, f = 1 MHz
CD (On), CS (On)
15
pF typ
VS = 0 V, f = 1 MHz
POWER REQUIREMENTS
VDD = +22 V, VSS = −22 V
IDD
50
µA typ
Digital inputs = 0 V or VDD
70
110
µA max
ISS
0.001
µA typ
Digital inputs = 0 V or VDD
1
µA max
VDD/VSS
±9/±22
V min/V max
GND = 0 V
1
Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance, RON
360
Ω typ
VS = 0 V to 10 V, IS = −1 mA; see
Figure 26
500
610
700
Ω max
VDD = 10.8 V, VSS = 0 V
On-Resistance Match Between
Channels, ∆RON
5.5
Ω typ
VS = 0 V to 10 V, IS = −1 mA
20
21
22
Ω max
On-Resistance Flatness, RFLAT (ON)
170
Ω typ
VS = 0 V to 10 V, IS = −1 mA
280
335
370
Ω max
LEAKAGE CURRENTS
VDD = 13.2 V, VSS = 0 V
Source Off Leakage, IS (Off)
±0.02
nA typ
VS = 1 V/10 V, VD = 10 V/1 V; see
Figure 28
±0.1
±0.2
±0.4
nA max
Drain Off Leakage, ID (Off)
±0.02
nA typ
VS = 1 V/10 V, VD = 10 V/1 V; see
Figure 28
±0.1
±0.2
±0.4
nA max
Channel On Leakage, ID (On), IS (On)
±0.08
nA typ
VS = VD = 1 V/10 V; see Figure 25
±0.2
±0.3
±0.9
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.002
µA typ
VIN = VGND or VDD
±0.1
µA max
Digital Input Capacitance, CIN
3
pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
235
ns typ
RL = 300 Ω, CL = 35 pF
295
365
410
ns max
VS = 8 V; see Figure 31
tON (EN)
240
ns typ
RL = 300 Ω, CL = 35 pF
305
380
430
ns max
VS = 8 V; see Figure 33
tOFF (EN)
70
ns typ
RL = 300 Ω, CL = 35 pF
90
105
115
ns max
VS = 8 V; see Figure 33
Break-Before-Make Time Delay, tD
125
ns typ
RL = 300 Ω, CL = 35 pF
65
ns min
VS1 = VS2 = 8 V; see Figure 32
Charge Injection, QINJ
0
pC typ
VS = 6 V, RS = 0 Ω, CL = 1 nF; see
Figure 34


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