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EN71NS032A0 Datasheet(PDF) 5 Page - Eon Silicon Solution Inc.

No. de pieza EN71NS032A0
Descripción Electrónicos  Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
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Fabricante Electrónico  EON [Eon Silicon Solution Inc.]
Página de inicio  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN71NS032A0 Datasheet(HTML) 5 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2004 Eon Silicon Solution, Inc., www.eonssi.com
or modifications due to changes in technical specifications.
5
EN71NS032A0
Rev. B, Issue Date: 2011/07/05
Operating Mode (For Asynchronous mode)
Asynchronous Mode
BCR[15]=1
Power
CLK ADV# CE#
OE# WE# CRE
UB#/
LB#
WAIT
2
A/DQ[15:0
]
Note
Read
Active
X
L
L
H
L
L
Low-z
Data out
4
Write
Active
X
L
X
L
L
L
High-z
Data in
4
Standby
Standby
H or L
X
H
X
X
L
X
High-z
High-z
5, 6
No operation
Idle
X
X
L
X
X
L
X
Low-z
X
4, 6
Configuration register
write
Active
X
L
H
L
H
X
Low-z
High-z
Configuration register
read
Active
X
L
L
H
H
L
Low-z
Config.
Reg.out
DPD
Deep
Power-down
L
X
H
X
X
X
X
High-z
High-z
7
Operating Mode (For Synchronous Burst mode)
Burst Mode
BCR[15]=0
Power
CLK ADV# CE#
OE# WE# CRE
UB#/
LB#
WAIT A/DQ[15:0] Note
Async read
Active
H or L
L
L
H
L
L
Low-z
Data out
4, 8
Async write
Active
H or L
L
X
L
L
L
High-z
Data in
4
Standby
Standby
H or L
X
H
X
X
L
X
High-z
High-z
5, 6
No operation
Idle
H or L
X
L
X
X
L
X
Low-z
X
4, 6
Initial burst read
Active
L
L
X
H
L
L
Low-z
Address
4, 9
Initial burst write
Active
L
L
H
L
L
X
Low-z
Address
4, 9
Burst continue
Active
H
L
X
X
X
L
Low-z
Data out
or
Data in
4, 9
Configuration register
write
Active
L
L
H
L
H
X
Low-z
High-z
9. 10
Configuration register
read
Active
L
L
L
H
H
L
Low-z
Config.
Reg.out
9, 10
DPD
Deep
Power-down
L
X
H
X
X
X
X
High-z
High-z
7


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