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ADS58C28 Datasheet(PDF) 5 Page - Texas Instruments |
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ADS58C28 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 67 page ADS58C28 www.ti.com SBAS509B – JUNE 2010 – REVISED OCTOBER 2010 ELECTRICAL CHARACTERISTICS Typical values are at +25°C, AVDD = 1.8V, DRVDD = 1.8V, sampling frequency = 200MSPS, 50% clock duty cycle, –1dBFS differential analog input, and LVDS and CMOS interfaces, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8V, and DRVDD = 1.8V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RESOLUTION Resolution 11 Bits ANALOG INPUTS Differential input voltage range 2 VPP Differential input resistance 0.75 k Ω (at 200MHz, see Figure 55) Differential input capacitance 3.7 pF (at 200MHz, see Figure 56) Analog input bandwidth 550 MHz Analog input common-mode current 1.5 µA/MSPS (per input pin of each channel) VCM common-mode voltage output 0.95 V VCM output current capability 4 mA POWER SUPPLY IAVDD Analog supply current 141 163 mA IDRVDD 350mV LVDS swing with 100 Ω Output buffer supply current LVDS interface 120 130 mA external termination after reset Analog power 254 mW Digital power LVDS interface 216 mW Global power-down 15 mW DC ACCURACY DNL Differential nonlinearity fIN = 170MHz –0.6 0.6 LSB INL Integral nonlinearity fIN = 170MHz –1.5 0.3 1.5 LSB Specified across devices and Offset error –15 15 mV channels within a device There are two sources of gain error: internal reference inaccuracy and channel gain error Gain error as a result of internal reference Specified across devices and –2 2 %FS inaccuracy alone channels within a device Specified across devices and Gain error of channel alone(1) ±0.1 ±1 %FS channels within a device Channel gain error temperature coefficient 0.002 Δ%/°C (1) Specified by design and characterization; not tested in production. Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): ADS58C28 |
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