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CSD16409Q3 Datasheet(PDF) 2 Page - Texas Instruments

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No. de Pieza. CSD16409Q3
Descripción  N-Channel NexFET™ Power MOSFETs
Descarga  11 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD16409Q3 Datasheet(HTML) 2 Page - Texas Instruments

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CSD16409Q3
SLPS204A – AUGUST 2009 – REVISED MAY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
25
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
1
mA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +16/-12V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
1.7
2
2.3
V
VGS = 4.5V, ID = 17A
9.5
12.4
m
RDS(on)
Drain to Source On Resistance
VGS = 10V, ID = 17A
6.2
8.2
m
gfs
Transconductance
VDS = 15V, ID = 17A
38
S
Dynamic Characteristics
CISS
Input Capacitance
600
800
pF
COSS
Output Capacitance
VGS = 0V, VDS = 12.5V , f = 1MHz
480
635
pF
CRSS
Reverse Transfer Capacitance
40
55
pF
Rg
Series Gate Resistance
0.9
1.8
Qg
Gate Charge Total (4.5V)
4
5.6
nC
Qgd
Gate Charge Gate to Drain
1
nC
VDS = 12.5V, ID = 17A
Qgs
Gate Charge Gate to Source
2.1
nC
Qg(th)
Gate Charge at Vth
1.1
nC
QOSS
Output Charge
VDS = 12.9V, VGS = 0V
9.1
nC
td(on)
Turn On Delay Time
6.5
ns
tr
Rise Time
10.6
ns
VDS = 12.5V, VGS = 4.5V,
ID = 17A, RG = 2Ω
td(off)
Turn Off Delay Time
6.3
ns
tf
Fall Time
3.4
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 17A, VGS = 0V
0.85
1
V
Qrr
Reverse Recovery Charge
VDD = 12.9V, IF = 17A, di/dt = 300A/ms
13.8
nC
trr
Reverse Recovery Time
VDD = 12.9V, IF = 17A, di/dt = 300A/ms
17.5
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX
UNIT
R qJC
Thermal Resistance Junction to Case(1)
3.5
°C/W
R qJA
Thermal Resistance Junction to Ambient(1) (2)
59
°C/W
(1)
RqJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.06 inch thick FR4 board. RqJC is
specified by design while RqJA is determined by the user’s board design.
(2)
Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu.
2
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16409Q3


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