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CSD16415Q5 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD16415Q5 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 12 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 Qg − Gate Charge − nC 0 2 4 6 8 10 12 0 10 20 30 40 50 60 G003 ID = 40A VDS = 12.5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage - V TC = 25°C TC = 125ºC ID = 40A CSD16415Q5 www.ti.com SLPS259 – DECEMBER 2011 N-Channel NexFET ™ Power MOSFET Check for Samples: CSD16415Q5 1 FEATURES PRODUCT SUMMARY 2 • Ultralow Qg and Qgd VDS Drain-to-source voltage 25 V • Very Low On-Resistance Qg Gate charge, total (4.5 V) 21 nC • Low Thermal Resistance Qgd Gate charge, gate-to-drain 5.2 nC VGS = 4.5 V 1.5 m Ω • Avalanche Rated rDS(on) Drain-to-source on-resistance VGS = 10 V 0.99 m Ω • Pb Free Terminal Plating VGS(th) Threshold voltage 1.5 V • RoHS Compliant • Halogen Free ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 13-inch Tape and CSD16415Q5 6-mm plastic (33-cm) 2500 • Point-of-Load Synchronous Buck Converter reel package reel for Applications in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS • Optimized for Synchronous FET Applications TA = 25°C unless otherwise stated VALUE UNIT VDS Drain-to-source voltage 25 V DESCRIPTION VGS Gate-to-source voltage +16/-12 V The NexFET ™ power MOSFET has been designed Continuous drain current, TC = 25°C 100 A to minimize losses in power conversion applications. ID Continuous drain current(1) 38 A IDM Pulsed drain current, TA = 25°C (2) 200 A Top View PD Power dissipation(1) 3.2 W TJ, Operating junction and storage temperature –55 to 150 °C TSTG range Avalanche energy, single-pulse EAS 500 mJ ID = 100 A, L = 0.1 mH, RG = 25 Ω (1) RθJA = 40°C/W on 1-in 2 (6.45-cm2) Cu [2 oz. (0.071-mm thick)] on 0.060-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300 μs, duty cycle ≤2% rDS(ON) vs VGS Gate Charge 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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