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CSD16415Q5 Datasheet(PDF) 1 Page - Texas Instruments

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No. de pieza CSD16415Q5
Descripción Electrónicos  N-Channel NexFET??Power MOSFET
Download  12 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

CSD16415Q5 Datasheet(HTML) 1 Page - Texas Instruments

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background image
1
D
2
D
3
D
4
D
D
5
G
6
S
7
S
8
S
P0094-01
Qg − Gate Charge − nC
0
2
4
6
8
10
12
0
10
20
30
40
50
60
G003
ID = 40A
VDS = 12.5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to- Source Voltage - V
TC = 25°C
TC = 125ºC
ID = 40A
CSD16415Q5
www.ti.com
SLPS259
– DECEMBER 2011
N-Channel NexFET
™ Power MOSFET
Check for Samples: CSD16415Q5
1
FEATURES
PRODUCT SUMMARY
2
Ultralow Qg and Qgd
VDS
Drain-to-source voltage
25
V
Very Low On-Resistance
Qg
Gate charge, total (4.5 V)
21
nC
Low Thermal Resistance
Qgd
Gate charge, gate-to-drain
5.2
nC
VGS = 4.5 V
1.5
m
Avalanche Rated
rDS(on)
Drain-to-source on-resistance
VGS = 10 V
0.99
m
Pb Free Terminal Plating
VGS(th)
Threshold voltage
1.5
V
RoHS Compliant
Halogen Free
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
APPLICATIONS
SON 5-mm
×
13-inch
Tape and
CSD16415Q5
6-mm plastic
(33-cm)
2500
Point-of-Load Synchronous Buck Converter
reel
package
reel
for Applications in Networking, Telecom and
Computing Systems
ABSOLUTE MAXIMUM RATINGS
Optimized for Synchronous FET Applications
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain-to-source voltage
25
V
DESCRIPTION
VGS
Gate-to-source voltage
+16/-12
V
The NexFET
™ power MOSFET has been designed
Continuous drain current, TC = 25°C
100
A
to minimize losses in power conversion applications.
ID
Continuous drain current(1)
38
A
IDM
Pulsed drain current, TA = 25°C
(2)
200
A
Top View
PD
Power dissipation(1)
3.2
W
TJ,
Operating junction and storage temperature
–55 to 150
°C
TSTG
range
Avalanche energy, single-pulse
EAS
500
mJ
ID = 100 A, L = 0.1 mH, RG = 25 Ω
(1)
RθJA = 40°C/W on 1-in
2 (6.45-cm2) Cu [2 oz. (0.071-mm
thick)] on 0.060-inch (1.52-mm) thick FR4 PCB.
(2)
Pulse duration
≤300 μs, duty cycle ≤2%
rDS(ON) vs VGS
Gate Charge
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright
© 2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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