TPS51916RUKT datasheet(5/34 Pages) TI1

No. de pieza	TPS51916RUKT

Descripción Electrónicos	Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck

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Fabricante Electrónico	TI1 [Texas Instruments]

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TPS51916

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SLUSAE1D – DECEMBER 2010 – REVISED JUNE 2012

ELECTRICAL CHARACTERISTICS (continued)

over operating free-air temperature range, VV5IN = 5 V, VLDOIN is connected to VDDQ output, VMODE= 0 V, VS3= VS5= 5 V

(unless otherwise noted)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VDDQ MOSFET DRIVER

Source, IDRVH = –50 mA

1.6

3.0

RDRVH

DRVH resistance

Sink, IDRVH = 50 mA

0.6

1.5

Ω

Source, IDRVL = –50 mA

0.9

2.0

RDRVL

DRVL resistance

Sink, IDRVL = 50 mA

0.5

1.2

DRVH-off to DRVL-on

10

tDEAD

Dead time

ns

DRVL-off to DRVH-on

20

INTERNAL BOOT STRAP SW

VFBST

Forward Voltage

VV5IN-VBST, TA = 25°C, IF = 10 mA

0.1

0.2

V

IVBSTLK

VBST leakage current

TA = 25°C, VVBST = 33 V, VSW = 28 V

0.01

1.5

μA

LOGIC THRESHOLD

IMODE

MODE source current

14

15

16

μA

MODE 0-1

109

129

149

MODE 1-2

235

255

275

MODE 2-3

392

412

432

VTHMODE

MODE threshold voltage

MODE 3-4

580

600

620

mV

MODE 4-5

829

854

879

MODE 5-6

1202

1232

1262

MODE 6-7

1760

1800

1840

VIL

S3/S5 low-level voltage

0.5

VIH

S3/S5 high-level voltage

1.8

V

VIHYST

S3/S5 hysteresis voltage

0.25

IILK

S3/S5 input leak current

–1

0

1

μA

SOFT START

Internal soft-start time, CVREF = 0.1 μF,

tSS

VDDQ soft-start time

1.1

ms

S5 rising to VVDDQSNS > 0.99 × VREFIN

PGOOD COMPARATOR

PGOOD in from higher

106%

108%

110%

PGOOD in from lower

90%

92%

94%

VTHPG

VDDQ PGOOD threshold

PGOOD out to higher

114%

116%

118%

PGOOD out to lower

82%

84%

86%

IPG

PGOOD sink current

VPGOOD = 0.5 V

3

5.9

mA

Delay for PGOOD in

0.8

1

1.2

ms

tPGDLY

PGOOD delay time

Delay for PGOOD out, with 100 mV over drive

330

ns

tPGSSDLY

PGOOD start-up delay

CVREF = 0.1 μF, S5 rising to PGOOD rising

2.5

ms

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