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ST3422A Datasheet(PDF) 1 Page - Stanson Technology

No. de Pieza. ST3422A
Descripción  The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
Descarga  6 Pages
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Fabricante  STANSON [Stanson Technology]
Página de inicio  http://www.stansontech.com
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ST3422A Datasheet(HTML) 1 Page - Stanson Technology

   
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ST3422A
N Channel Enhancement Mode MOSFET
6.0A
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3422A 2009. V1
1
DESCRIPTION
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching
.
PIN CONFIGURATION
SOT-23-3L
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23-3L
Y: Year Code
A: Week Code
FEATURE
60V/6.0A, RDS(ON) = 28m
(Typ.)
@VGS = 10V
60V/2.5A, RDS(ON) = 38m
@VGS = 4.5V
60V/1.5A, RDS(ON) = 100m
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
1
2
D
G
S
3
1
2
22YA


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