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STN4392 Datasheet(PDF) 1 Page - Stanson Technology

No. de Pieza. STN4392
Descripción  STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Fabricante  STANSON [Stanson Technology]
Página de inicio  http://www.stansontech.com
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STN4392 Datasheet(HTML) 1 Page - Stanson Technology

   
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STN4
STN4
STN4
STN439
39
39
392
2
2
2
N Channel Enhancement Mode MOSFET
13A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4392 2009. V1
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN4392 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN
PIN
PIN
PIN CONFIGURATION
CONFIGURATION
CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING
MARKING
MARKING
MARKING
SOP-8
SOP-8
SOP-8
SOP-8
Y
Y
Y
Y:Year
Year
Year
Year Code
Code
Code
Code
A
A
A
A:Process
Process
Process
Process Code
Code
Code
Code
FEATURE
FEATURE
FEATURE
FEATURE
30V/13A, R
DS(ON) = 8mΩ (Typ.)
@VGS = 10V
30V/10A, R
DS(ON) = 12mΩ
@VGS = 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
STN4392
STN4392
STN4392
STN4392
Y
Y
Y
Y A
A
A
A


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