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STN4392 Datasheet(PDF) 3 Page - Stanson Technology

No. de Pieza. STN4392
Descripción  STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Fabricante  STANSON [Stanson Technology]
Página de inicio  http://www.stansontech.com
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STN4392 Datasheet(HTML) 3 Page - Stanson Technology

   
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STN4
STN4
STN4
STN439
39
39
392
2
2
2
N Channel Enhancement Mode MOSFET
13A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4392 2009. V1
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=250uA
30
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=250uA
1.0
3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=30V,VGS=0V
1
uA
VDS=30V,VGS=0V
TJ=125℃
100
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=13A
VGS=4.5V,ID=10A
6
9
8
12
Forward
Transconductance
gfs
VDS=15V,ID=20A
10
S
Diode Forward Voltage
VSD
IS=13A,VGS=0V
1.0
1.5
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Qg
VDS=15V,VGS=10V
ID≡13A
12
20
nC
Gate-Source Charge
Qgs
4
Gate-Drain Charge
Qgd
5
Input Capacitance
Ciss
VDS =25V,VGS=0V
F=1MHz
1500
pF
Output Capacitance
Coss
320
Reverse
TransferCapacitance
Crss
200
Turn-On Time
td(on)
tr
VDD=15V,RL=15Ω
ID=13A,VGS=10V
RG=2.5Ω
8
12
nS
10
15
Turn-Off Time
td(off)
tf
18
30
6
9


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