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STP7401 Datasheet(PDF) 3 Page - Stanson Technology

No. de Pieza. STP7401
Descripción  STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Fabricante  STANSON [Stanson Technology]
Página de inicio  http://www.stansontech.com
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STP7401 Datasheet(HTML) 3 Page - Stanson Technology

   
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STP7401
P Channel Enhancement Mode MOSFET
-2.8A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP7401 2005. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-30
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
-0.4
-1.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±
100
nA
VDS=-24V,VGS=0V
-1
Zero Gate Voltage Drain
Current
IDSS
VDS=-24V,VGS=0V
TJ=85℃
-5
uA
On-State Drain Current
ID(on)
VDS≦-5V,VGS=-4.5V
-4.0
A
Drain-source On-Resistance
RDS(on)
VGS=-10V,ID=-2.8A
VGS=-4.5V,ID=-2.5A
VGS=-2.5V,ID=-1.5A
VGS=-1.8V,ID=-1.0A
105
125
155
210
115
135
170
240
Forward Transconductance
gfs
VDS=-5V,ID=-4.0V
4
S
Diode Forward Voltage
VSD
IS=-1.0A,VGS=0V
-0.8 -1.2
V
Dynamic
Total Gate Charge
Qg
5.8
Gate-Source Charge
Qgs
0.8
Gate-Drain Charge
Qgd
VDS=-15V
VGS=-4.5V
ID≣-2.0A
1.5
nC
Input Capacitance
Ciss
380
Output Capacitance
Coss
55
Reverse Transfer
Capacitance
Crss
VDS=-15V
VGS=0V
F=1MHz
40
pF
6
Turn-On Time
td(on)
tr
3.9
40
Turn-Off Time
td(off)
tf
VDS=-15V
ID=-1A
RL=15Ω
RG=-3Ω
VGEN=-10V
15
nS


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