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TC74VHCU04F Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TC74VHCU04F Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page  TC74VHCU04F/FT 2012-02-29 3 Electrical Characteristics DC Characteristics Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit High-level input voltage VIH VOUT = VOL 2.0 3.0 to 5.5 1.70 VCC × 0.8 ― ― ― ― 1.70 VCC × 0.8 ― ― V Low-level input voltage VIL VOUT = VOH 2.0 3.0 to 5.5 ― ― ― ― 0.30 VCC × 0.2 ― ― 0.30 VCC × 0.2 V VIN = VIL IOH = −50 μA 2.0 3.0 4.5 1.8 2.7 4.0 2.0 3.0 4.5 ― ― ― 1.8 2.7 4.0 ― ― ― High-level output voltage VOH VIN = GND IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 ― ― ― ― 2.48 3.80 ― ― V VIN = VIH IOL = 50 μA 2.0 3.0 4.5 ― ― ― 0.0 0.0 0.0 0.2 0.3 0.5 ― ― ― 0.2 0.3 0.5 Low-level output voltage VOL VIN = VCC IOL = 4 mA IOL = 8 mA 3.0 4.5 ― ― ― ― 0.36 0.36 ― ― 0.44 0.44 V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ― ― ±0.1 ― ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ― ― 2.0 ― 20.0 μA AC Characteristics (input: tr = tf = 3 ns) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) CL (pF) Min Typ. Max Min Max Unit 15 ― 5.0 8.9 1.0 10.5 ― 3.3 ± 0.3 50 ― 7.5 11.4 1.0 13.0 15 ― 3.5 5.5 1.0 6.5 Propagation delay time tpLH tpHL ― 5.0 ± 0.5 50 ― 5.0 7.0 1.0 8.0 ns Input capacitance CIN ― ― 4 10 ― 10 pF Power dissipation capacitance CPD (Note) ― 9 ― ― ― pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/6 (per gate) |
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