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BF1102R Datasheet(PDF) 65 Page - NXP Semiconductors |
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BF1102R Datasheet(HTML) 65 Page - NXP Semiconductors |
65 / 130 page 66 NXP Semiconductors RF Manual 16th edition 2.5.4 Buildingondecadesofinnovationinmicrowaveandradar NXP builds on more than 50 years of history in semiconductor technology and component design. For more than three decades we have led in providing high-performance RF technologies for microwave applications. The company has built a strong position in the field of RF small-signal and power transistors for microwave amplifiers with best-in-class Si devices and processing technologies. We were the first semiconductor company to supply S-band transistors (2700 to 3500 MHz) based on laterally diffused metal-oxide-silicon (LDMOS). To further strengthen our position towards the future, we are currently developing new high-power and high-bandwidth technologies based on gallium nitride (GaN) material. Another enabling technology is NXP’s BICMOS process QUBiC, which is available in several variants with f T up to 200 GHz, each specialized to address specific small-signal RF applications. The product portfolio encompasses: - Low-noise amplifiers (LNAs) - Variable-gain amplifiers (VGAs) - Mixers - Local oscillators (LOs) - LO generators NXP now also focuses on architectural breakthroughs and has developed highly integrated products for microwave and millimeter wave. One example is a family of LO generators from 7 to 15 GHz with integrated PLL and VCO. Another example is an integrated RF power module in S-band (3.1-3.5 GHz) at 200 W. RF small-signal product highlight Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators TFF1xxxHN are low-power, low-spurious solutions that simplify design-in and lower the total cost of ownership. Features ` Lowest noise LO generators for 7 to 15 GHz range ` Maximum power consumption for all types, typical 330 mW ` Phase-noise compliant with IESS-308 (Intelsat) ` Proven QUBiC4X SiGe:C technology (120 GHz f T process) ` External loop filter ` Differential input and output ` Lock-detect output ` Internally stabilized voltage reference for loop filter RF power product highlight The BLS6G2933P-200 is the first LDMOS-based, industry- standard pallet produced by NXP. This pallet offers more than 40% efficiency and includes the complete bias network for S-band applications. |
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