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TSM3N80CZC0 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM3N80CZC0 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 12 page  TSM3N80 800V N-Channel Power MOSFET 2/12 Version: B12 Thermal Performance Parameter Symbol IPAK/DPAK ITO-220 TO-220 Unit Thermal Resistance - Junction to Case RӨJC 1.33 3.9 1.33 oC/W Thermal Resistance - Junction to Ambient RӨJA 110 62.5 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1.5A RDS(ON) -- 3.3 4.2 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 -- 4 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 30V, ID = 1.5A gfs -- 3.7 -- S Dynamic Total Gate Charge VDS = 640V, ID = 3A, VGS = 10V (Note 4,5) Qg -- 19 -- nC Gate-Source Charge Qgs -- 4 -- Gate-Drain Charge Qgd -- 7.6 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 696 -- pF Output Capacitance Coss -- 65 -- Reverse Transfer Capacitance Crss -- 10.2 -- Switching Turn-On Delay Time VGS = 10V, ID = 3A, VDD = 400V, RG =25Ω (Note 4,5) td(on) -- 48 -- nS Turn-On Rise Time tr -- 36 -- Turn-Off Delay Time td(off) -- 106 -- Turn-Off Fall Time tf -- 41 -- Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in the MOSFET IS -- -- 3 A Source Current (Pulse) ISM -- -- 12 A Diode Forward Voltage IS = 3A, VGS = 0V VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS =3A, dIF/dt = 100A/us tfr -- 370 -- nS Reverse Recovery Charge Qfr -- 1.8 -- uC Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=3A, L=59mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature |
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