2N60Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-829.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±20

V

Avalanche Current (Note 2)

2.0

A

Drain Current

Continuous

2.0

A

Pulsed (Note 2)

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

140

mJ

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220F

23

W

TO-251/TO-252

44

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F

62.5

°С/W

TO-251/TO-252

100

°С/W

Junction to Case

TO-220F

5.5

°С/W

TO-251/TO-252

2.87

°С/W