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SS569LUA Datasheet(PDF) 4 Page - SEC Electronics Inc.

No. de pieza SS569LUA
Descripción Electrónicos  Hall Latch - High Sensitivity
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Fabricante Electrónico  SECELECTRONICS [SEC Electronics Inc.]
Página de inicio  http://www.secsemi.com
Logo SECELECTRONICS - SEC Electronics Inc.

SS569LUA Datasheet(HTML) 4 Page - SEC Electronics Inc.

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SS569
Hall Latch - High Sensitivity
Magnetic Specifications
DC Operating Parameters VDD = 2.5V to 24V (unless otherwise specified)
SS569
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Operating Point
BOP
10
18
30
G
Release Point
BRP
-30
-18
-10
G
Hysteresis
BHYST
E spec., TA = 85°C
36
G
Operating Point
BOP
8
18
35
G
Release Point
BRP
-35
-18
-8
G
Hysteresis
BHYST
E spec., TA = 85°C
36
G
Operating Point
BOP
5
18
40
G
Release Point
BRP
-40
-18
-5
G
Hysteresis
BHYST
L spec., TA = 150°C
36
G
Table 4: Magnetic Specifications
Detailed General Description
The SS569 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to
operate properly.
The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds
the operate point threshold, BOP. After turn-on, the output voltage is VDSon. Note that the device latches, that is, a south
pole of sufficient strength towards the branded surface of the device turns the device on. The device remains on if the
south pole is removed (B→0). This latching property defines the device as a magnetic memory.
When the magnetic field is reduced below the release point, BRP, the OUT pin turns off (goes high). The difference in
the magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents
output oscillation near the switching point, and allows clean switching of the output even in the presence of external
mechanical vibration and electrical noise.
The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means
magnetic fields with equivalent strength and opposite direction drive the output high and low.
Powering-on the device in the hysteresis region (less than BOP and higher than BRP) allows an indeterminate output
state. The correct state is attained after the first excursion beyond BOP or BRP.
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on in the presence
of a sufficiently strong North pole magnetic field applied to the marked face.
Output level
Output level
4
V2.10
May 1, 2012
0mT
0mT
OUT = High
OUT = High
Flux density
B OP
18Gs typ
OUT = Low
OUT = Low
UA package - Latch characteristic
B OP
18Gs typ
B RP
-18Gs typ
B RP
-18Gs typ
Flux density
SO package - Latch characteristic
 
HYST
B
B HYST


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