FDC8886 datasheet(4/7 Pages) FAIRCHILD

No. de pieza	FDC8886

Descripción Electrónicos	N-Channel Power Trench짰 MOSFET 30 V, 6.5 A, 23 m廓

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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FDC8886 Rev.C3

Figure 7.

01

234

56

0

2

4

6

8

10

ID = 6.5 A

VDD = 20 V

VDD = 15 V

Qg, GATE CHARGE (nC)

VDD = 10 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

30

10

100

500

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

5

1

2

3

4

5

6

7

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0

2

4

6

8

VGS = 4.5 V

RθJA = 78

o

C/W

VGS = 10 V

T

A

, AMBIENT TEMPERATURE (

o

C

)

Maximum Continuous Drain

Current vs Ambient Temperature

Figure 11.

0.01

0.1

1

10

100200

0.01

0.1

1

10

30

100 μs

1 ms

1 s

10 ms

DC

10 s

100 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJA = 175

oC/W

TA = 25

oC

Forward Bias Safe

Operating Area

Figure 12.

10

-4

10

-3

10

-2

10

-1

110

100

10

3

0.5

1

10

100

200

SINGLE PULSE

RθJA = 175

oC/W

TA = 25

oC

t, PULSE WIDTH (sec)

Single Pulse Maximum

Power Dissipation

Typical Characteristics T

J = 25 °C unless otherwise noted

Número de pieza similar - FDC8886

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	FDC8884	267Kb / 7P	N-Channel Power Trench짰 MOSFET 30 V, 6.5 A, 23 m廓
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Descripción similar - FDC8886

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Fairchild Semiconductor	FDC8884	267Kb / 7P	N-Channel Power Trench짰 MOSFET 30 V, 6.5 A, 23 m廓
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FDC8886 Datasheet(PDF) 4 Page - Fairchild Semiconductor

FDC8886 Datasheet(HTML) 4 Page - Fairchild Semiconductor

Número de pieza similar - FDC8886

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